The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life? （MoBL?） in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Placing the device into standby mode reduces power consumption significantly when deselected （CE1 HIGH or CE2 LOW）。 The eight input and output pins （I/O0 through I/O7） are placed in a high impedance state when the device is deselected （CE1 HIGH or CE2 LOW）， the outputs are disabled （OE HIGH）， or a write operation is in progress （CE1 LOW and CE2 HIGH and WE LOW）。 To write to the device， take Chip Enables （CE1 LOW and CE2 HIGH） and Write Enable （WE） input LOW. Data on the eight I/O pins （I/O0 through I/O7） is then written into the location specified on the address pins （A0 through A19）。 To read from the device， take Chip Enables （CE1 LOW and CE2 HIGH） and OE LOW while forcing the WE HIGH. Under these conditions， the contents of the memory location specified by the address pins appear on the I/O pins. See Truth Table on page 11 for a complete description of read and write modes. For a complete list of related documentation， click here.