研究了SiC表面氫化降低界面態(tài)密度的機理。采用緩慢氧化、稀釋的HF刻蝕、沸水浸泡的表面氫化處理方法，降低SiC表面態(tài)密度。該方法用于SiC器件的表面處理，在100℃以下制備了理想因子為1.20～1.25的6H-SiC肖特基二極管，其歐姆接觸比接觸電阻為(5～7)×10?3Ω·cm2。表面氫化處理的優(yōu)點在于避免了歐姆接觸
所需的800～1 200℃的高溫合金，降低了工藝難度，改善了肖特基結(jié)的電學(xué)特性。The mechanism of lowering the density of interface states due to hydrogenating SiC surface was studied. The treatment of hydrogenation SiC surface by slowly oxidizing，etching by dilute HF and then immersing in boiling water was utilized to lower the density of surface states. The method was applied to treat the surface during fabricating SiC device. SiC Schottky diodes with ideality factor of 1.2～1.25 and ohmic contacts with specific resistance of (5～7)×10-3Ωcm2 were obtained below 100℃. Its advantages lay in avoiding the high-temperature annealing at 800～1 200℃ for conventional Ohmic contacts, decreasing technical difficulty, and improving the electric performances of SiC Schottky junction.